Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation

N. A. Tulina; A. N. Rossolenko; I. M. Shmytko; N. N. Kolesnikov; D. N. Borisenko; V. V. Sirotkin; I. Yu. Borisenko

doi:10.3103/S1062873816060381

Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation

Autores: Tulina N.A.¹, Rossolenko A.N.¹, Shmytko I.M.¹, Kolesnikov N.N.¹, Borisenko D.N.¹, Sirotkin V.V.², Borisenko I.Y.²
Afiliações:
1. Institute of Solid State Physics
2. Institute of Microelectronics Technology and High Purity Materials
Edição: Volume 80, Nº 6 (2016)
Páginas: 672-674
Seção: Proceedings of the Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-18 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and Properties of Oxides” ODPO-18
URL: https://journals.rcsi.science/1062-8738/article/view/184499
DOI: https://doi.org/10.3103/S1062873816060381
ID: 184499

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The effect applied voltage frequency has on bipolar resistive switching in microcontact type heterostructures based on thin films and single crystals of bismuth selenide is studied both experimentally and via numerical simulation.