Structure and Surface Morphology of Cd1–xMnxSe Epitaxial Films
- Авторлар: Nuriyev I.R.1, Mehrabova M.A.2, Hasanov N.H.3
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Мекемелер:
- Abdullaev Institute of Physics
- Institute of Radiation Problems
- Baku State University
- Шығарылым: Том 12, № 3 (2018)
- Беттер: 504-506
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195380
- DOI: https://doi.org/10.1134/S102745101803014X
- ID: 195380
Дәйексөз келтіру
Аннотация
Cd1–xMnxSe (х = 0.03) epitaxial films are produced by the molecular beam condensation method in a vacuum chamber with a residual pressure of 10–4 Pa on mica and glass substrates. It is established that at room temperature and at a substrate temperature of T = 573 K films of polycrystalline structure grow on the mica substrates, but films of both polycrystalline and amorphous structure grow on the glass substrates. It is shown that the polycrystalline Cd1–xMnxSe (х = 0.03) films, unlike the bulk crystals, have a sphalerite-type structure with a lattice parameter of a = 6.05 Å. Increasing the substrate temperature to 673 K leads to epitaxial growth with the direction [111]. Dark aggregates, observed on the film surface, are removed using a source of compensating Se vapors during the growth process. The optimal conditions for the production of structurally perfect epitaxial films are defined.
Авторлар туралы
I. Nuriyev
Abdullaev Institute of Physics
Email: mehrabova@mail.ru
Әзірбайжан, Baku, AZ, 1073
M. Mehrabova
Institute of Radiation Problems
Хат алмасуға жауапты Автор.
Email: mehrabova@mail.ru
Әзірбайжан, Baku, AZ, 1143
N. Hasanov
Baku State University
Email: mehrabova@mail.ru
Әзірбайжан, Baku, AZ, 1143
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