Structure and Surface Morphology of Cd1–xMnxSe Epitaxial Films
- 作者: Nuriyev I.R.1, Mehrabova M.A.2, Hasanov N.H.3
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隶属关系:
- Abdullaev Institute of Physics
- Institute of Radiation Problems
- Baku State University
- 期: 卷 12, 编号 3 (2018)
- 页面: 504-506
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195380
- DOI: https://doi.org/10.1134/S102745101803014X
- ID: 195380
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详细
Cd1–xMnxSe (х = 0.03) epitaxial films are produced by the molecular beam condensation method in a vacuum chamber with a residual pressure of 10–4 Pa on mica and glass substrates. It is established that at room temperature and at a substrate temperature of T = 573 K films of polycrystalline structure grow on the mica substrates, but films of both polycrystalline and amorphous structure grow on the glass substrates. It is shown that the polycrystalline Cd1–xMnxSe (х = 0.03) films, unlike the bulk crystals, have a sphalerite-type structure with a lattice parameter of a = 6.05 Å. Increasing the substrate temperature to 673 K leads to epitaxial growth with the direction [111]. Dark aggregates, observed on the film surface, are removed using a source of compensating Se vapors during the growth process. The optimal conditions for the production of structurally perfect epitaxial films are defined.
作者简介
I. Nuriyev
Abdullaev Institute of Physics
Email: mehrabova@mail.ru
阿塞拜疆, Baku, AZ, 1073
M. Mehrabova
Institute of Radiation Problems
编辑信件的主要联系方式.
Email: mehrabova@mail.ru
阿塞拜疆, Baku, AZ, 1143
N. Hasanov
Baku State University
Email: mehrabova@mail.ru
阿塞拜疆, Baku, AZ, 1143
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