Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures


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The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.

作者简介

D. Alfimova

Southern Scientific Center

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

L. Lunin

Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)

编辑信件的主要联系方式.
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

M. Lunina

Southern Scientific Center

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

A. Pashchenko

Southern Scientific Center

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

S. Chebotarev

Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

A. Kazakova

Platov South-Russian State Polytechnic University (NPI)

Email: lunin_ls@mail.ru
俄罗斯联邦, Novocherkassk, Rostov oblast, 346428

D. Arustamyan

Platov South-Russian State Polytechnic University (NPI)

Email: lunin_ls@mail.ru
俄罗斯联邦, Novocherkassk, Rostov oblast, 346428

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