Мақаланы E-mail арқылы жіберу Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures
- Авторлар: Alfimova D.L.1, Lunin L.S.1,2, Lunina M.L.1, Pashchenko A.S.1, Chebotarev S.N.1,2, Kazakova A.E.2, Arustamyan D.A.2
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Мекемелер:
- Southern Scientific Center
- Platov South-Russian State Polytechnic University (NPI)
- Шығарылым: Том 12, № 3 (2018)
- Беттер: 466-472
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195352
- DOI: https://doi.org/10.1134/S1027451018030047
- ID: 195352
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Аннотация
The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.
Авторлар туралы
D. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006
L. Lunin
Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)
Хат алмасуға жауапты Автор.
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
M. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006
A. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006
S. Chebotarev
Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
A. Kazakova
Platov South-Russian State Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Ресей, Novocherkassk, Rostov oblast, 346428
D. Arustamyan
Platov South-Russian State Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Ресей, Novocherkassk, Rostov oblast, 346428
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