Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures
- Authors: Alfimova D.L.1, Lunin L.S.1,2, Lunina M.L.1, Pashchenko A.S.1, Chebotarev S.N.1,2, Kazakova A.E.2, Arustamyan D.A.2
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Affiliations:
- Southern Scientific Center
- Platov South-Russian State Polytechnic University (NPI)
- Issue: Vol 12, No 3 (2018)
- Pages: 466-472
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195352
- DOI: https://doi.org/10.1134/S1027451018030047
- ID: 195352
Cite item
Abstract
The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.
About the authors
D. L. Alfimova
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
L. S. Lunin
Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)
Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
M. L. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
A. S. Pashchenko
Southern Scientific Center
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
S. N. Chebotarev
Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428
A. E. Kazakova
Platov South-Russian State Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, Rostov oblast, 346428
D. A. Arustamyan
Platov South-Russian State Polytechnic University (NPI)
Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, Rostov oblast, 346428
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