Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures


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Abstract

The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.

About the authors

D. L. Alfimova

Southern Scientific Center

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

L. S. Lunin

Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)

Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

M. L. Lunina

Southern Scientific Center

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

A. S. Pashchenko

Southern Scientific Center

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

S. N. Chebotarev

Southern Scientific Center; Platov South-Russian State Polytechnic University (NPI)

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

A. E. Kazakova

Platov South-Russian State Polytechnic University (NPI)

Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, Rostov oblast, 346428

D. A. Arustamyan

Platov South-Russian State Polytechnic University (NPI)

Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, Rostov oblast, 346428

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