Formation of thin oxide layer on surface of copper caused by implantation of high-energy oxygen ions


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Combination of neutron and X-ray reflectometry was used to study the depth profile of 100 nm thin copper films with implanted oxygen ions with energy E = 10–30 keV and fluencies D = (0.2–5.4) ×1016 cm–2. The oxygen ion implantation at 30 keV was shown to lead to formation of 3 nm thick layer on the surface. Density and copper–oxygen stoichiometry of the observed surface layer was close to Cu2O oxide. We attribute the Cu2O oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.

作者简介

Yu. Khaydukov

Max Planck Institute for Solid State Research; Max Planck Society Outstation at FRM-II; Moscow State University, Skobeltsyn Institute of Nuclear Physics

编辑信件的主要联系方式.
Email: y.khaydukov@fkf.mpg.de
德国, Stuttgart, 70569; Garching, D-85747; Moscow, 119991

O. Soltwedel

Max Planck Institute for Solid State Research; Max Planck Society Outstation at FRM-II

Email: y.khaydukov@fkf.mpg.de
德国, Stuttgart, 70569; Garching, D-85747

Yu. Marchenko

Kharkiv Institute of Physics and Technology

Email: y.khaydukov@fkf.mpg.de
乌克兰, Kharkiv, 61108

D. Khaidukova

Flerov Laboratory of Nuclear Reactions

Email: y.khaydukov@fkf.mpg.de
俄罗斯联邦, Dubna, 141980

A. Csik

Institute for Nuclear Research

Email: y.khaydukov@fkf.mpg.de
匈牙利, Debrecen, H-4026

T. Acartürk

Max Planck Institute for Solid State Research

Email: y.khaydukov@fkf.mpg.de
德国, Stuttgart, 70569

U. Starke

Max Planck Institute for Solid State Research

Email: y.khaydukov@fkf.mpg.de
德国, Stuttgart, 70569

T. Keller

Max Planck Institute for Solid State Research; Max Planck Society Outstation at FRM-II

Email: y.khaydukov@fkf.mpg.de
德国, Stuttgart, 70569; Garching, D-85747

A. Guglya

Kharkiv Institute of Physics and Technology

Email: y.khaydukov@fkf.mpg.de
乌克兰, Kharkiv, 61108

Kh. Kazdayev

LLP “Devir”

Email: y.khaydukov@fkf.mpg.de
哈萨克斯坦, Astana, 010000

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