Formation of thin oxide layer on surface of copper caused by implantation of high-energy oxygen ions


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Аннотация

Combination of neutron and X-ray reflectometry was used to study the depth profile of 100 nm thin copper films with implanted oxygen ions with energy E = 10–30 keV and fluencies D = (0.2–5.4) ×1016 cm–2. The oxygen ion implantation at 30 keV was shown to lead to formation of 3 nm thick layer on the surface. Density and copper–oxygen stoichiometry of the observed surface layer was close to Cu2O oxide. We attribute the Cu2O oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.

Авторлар туралы

Yu. Khaydukov

Max Planck Institute for Solid State Research; Max Planck Society Outstation at FRM-II; Moscow State University, Skobeltsyn Institute of Nuclear Physics

Хат алмасуға жауапты Автор.
Email: y.khaydukov@fkf.mpg.de
Германия, Stuttgart, 70569; Garching, D-85747; Moscow, 119991

O. Soltwedel

Max Planck Institute for Solid State Research; Max Planck Society Outstation at FRM-II

Email: y.khaydukov@fkf.mpg.de
Германия, Stuttgart, 70569; Garching, D-85747

Yu. Marchenko

Kharkiv Institute of Physics and Technology

Email: y.khaydukov@fkf.mpg.de
Украина, Kharkiv, 61108

D. Khaidukova

Flerov Laboratory of Nuclear Reactions

Email: y.khaydukov@fkf.mpg.de
Ресей, Dubna, 141980

A. Csik

Institute for Nuclear Research

Email: y.khaydukov@fkf.mpg.de
Венгрия, Debrecen, H-4026

T. Acartürk

Max Planck Institute for Solid State Research

Email: y.khaydukov@fkf.mpg.de
Германия, Stuttgart, 70569

U. Starke

Max Planck Institute for Solid State Research

Email: y.khaydukov@fkf.mpg.de
Германия, Stuttgart, 70569

T. Keller

Max Planck Institute for Solid State Research; Max Planck Society Outstation at FRM-II

Email: y.khaydukov@fkf.mpg.de
Германия, Stuttgart, 70569; Garching, D-85747

A. Guglya

Kharkiv Institute of Physics and Technology

Email: y.khaydukov@fkf.mpg.de
Украина, Kharkiv, 61108

Kh. Kazdayev

LLP “Devir”

Email: y.khaydukov@fkf.mpg.de
Қазақстан, Astana, 010000

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