Effect of Co + -ion implantation on the composition and properties of free Si–Cu nanofilm structures

Z. A. Isakhanov; T. Kodirov; A. S. Halmatov; M. K. Ruzibaeva; Z. E. Muhtarov; B. E. Umirzakov

doi:10.1134/S1027451017010128

Effect of Co⁺-ion implantation on the composition and properties of free Si–Cu nanofilm structures

作者: Isakhanov Z.A.¹, Kodirov T.¹, Halmatov A.S.¹, Ruzibaeva M.K.¹, Muhtarov Z.E.¹, Umirzakov B.E.¹
隶属关系:
1. Institute of Ionic-Plasma and Laser Technologies
期: 卷 11, 编号 1 (2017)
页面: 152-154
栏目: Article
URL: https://journals.rcsi.science/1027-4510/article/view/191309
DOI: https://doi.org/10.1134/S1027451017010128
ID: 191309

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

The effect of Co⁺-ion implantation on the surface composition and the depth distribution profiles of atoms in a Si–Cu (100) heterostructure is investigated. After heating of the ion-implanted sample, a 50–60 Å thick CoSi₂ film is formed. It is revealed that after ion implantation the penetration depth of Cu atoms in Si becomes twice as large.