Effect of Co + -ion implantation on the composition and properties of free Si–Cu nanofilm structures

Z. A. Isakhanov; T. Kodirov; A. S. Halmatov; M. K. Ruzibaeva; Z. E. Muhtarov; B. E. Umirzakov

doi:10.1134/S1027451017010128

Effect of Co⁺-ion implantation on the composition and properties of free Si–Cu nanofilm structures

Autores: Isakhanov Z.A.¹, Kodirov T.¹, Halmatov A.S.¹, Ruzibaeva M.K.¹, Muhtarov Z.E.¹, Umirzakov B.E.¹
Afiliações:
1. Institute of Ionic-Plasma and Laser Technologies
Edição: Volume 11, Nº 1 (2017)
Páginas: 152-154
Seção: Article
URL: https://journals.rcsi.science/1027-4510/article/view/191309
DOI: https://doi.org/10.1134/S1027451017010128
ID: 191309

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The effect of Co⁺-ion implantation on the surface composition and the depth distribution profiles of atoms in a Si–Cu (100) heterostructure is investigated. After heating of the ion-implanted sample, a 50–60 Å thick CoSi₂ film is formed. It is revealed that after ion implantation the penetration depth of Cu atoms in Si becomes twice as large.