Analysis of the composition of graphene-oxide films using a backscattered H+ ion beam


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The O/C atomic ratios in films of oxidized and partially reduced graphene oxide are determined via the Rutherford backscattering of H+ ions. In addition, the conductivity σ is measured. It is established that the reduction noticeably decreases the О/С ratio and increases σ by a few orders of magnitude. We demonstrate for the first time the efficiency of Rutherford backscattering in studying graphene-type objects.

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A. Mokrushin

Institute of Microelectronic Technology and High Purity Materials

编辑信件的主要联系方式.
Email: mad@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

E. Egorov

Institute of Microelectronic Technology and High Purity Materials

Email: mad@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

V. Smirnov

Institute for Problems of Chemical Physics

Email: mad@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

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