Analysis of the composition of graphene-oxide films using a backscattered H+ ion beam
- 作者: Mokrushin A.D.1, Egorov E.V.1, Smirnov V.A.2
-
隶属关系:
- Institute of Microelectronic Technology and High Purity Materials
- Institute for Problems of Chemical Physics
- 期: 卷 10, 编号 3 (2016)
- 页面: 637-640
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/189073
- DOI: https://doi.org/10.1134/S1027451016030290
- ID: 189073
如何引用文章
详细
The O/C atomic ratios in films of oxidized and partially reduced graphene oxide are determined via the Rutherford backscattering of H+ ions. In addition, the conductivity σ is measured. It is established that the reduction noticeably decreases the О/С ratio and increases σ by a few orders of magnitude. We demonstrate for the first time the efficiency of Rutherford backscattering in studying graphene-type objects.
作者简介
A. Mokrushin
Institute of Microelectronic Technology and High Purity Materials
编辑信件的主要联系方式.
Email: mad@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
E. Egorov
Institute of Microelectronic Technology and High Purity Materials
Email: mad@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
V. Smirnov
Institute for Problems of Chemical Physics
Email: mad@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
补充文件
