Synergetics of catastrophic failures of semiconductor devices under high-energy ion irradiation

B. L. Oksengendler; F. G. Dzhurabekova; S. E. Maksimov; N. Yu. Turaev

doi:10.1134/S1027451016020324

Synergetics of catastrophic failures of semiconductor devices under high-energy ion irradiation

作者: Oksengendler B.L.¹, Dzhurabekova F.G.², Maksimov S.E.¹, Turaev N.Y.¹
隶属关系:
1. Institute of Ion-Plasma and Laser Technologies
2. Helsinki Institute of Physics and Department of Physics
期: 卷 10, 编号 2 (2016)
页面: 393-397
栏目: Article
URL: https://journals.rcsi.science/1027-4510/article/view/188504
DOI: https://doi.org/10.1134/S1027451016020324
ID: 188504

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详细

A synergetic theory of the radiation damage of semiconductor equipment is presented. The general approach is applied to explain the failure of the space vehicle “Fobos-Grunt.”