Enviar artigo por via de e-mail Synergetics of catastrophic failures of semiconductor devices under high-energy ion irradiation
- Autores: Oksengendler B.L.1, Dzhurabekova F.G.2, Maksimov S.E.1, Turaev N.Y.1
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Afiliações:
- Institute of Ion-Plasma and Laser Technologies
- Helsinki Institute of Physics and Department of Physics
- Edição: Volume 10, Nº 2 (2016)
- Páginas: 393-397
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/188504
- DOI: https://doi.org/10.1134/S1027451016020324
- ID: 188504
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Resumo
A synergetic theory of the radiation damage of semiconductor equipment is presented. The general approach is applied to explain the failure of the space vehicle “Fobos-Grunt.”
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Sobre autores
B. Oksengendler
Institute of Ion-Plasma and Laser Technologies
Autor responsável pela correspondência
Email: oksengendlerbl@yandex.ru
Uzbequistão, Tashkent, 100125
F. Dzhurabekova
Helsinki Institute of Physics and Department of Physics
Email: oksengendlerbl@yandex.ru
Finlândia, Helsinki, FI-00014
S. Maksimov
Institute of Ion-Plasma and Laser Technologies
Email: oksengendlerbl@yandex.ru
Uzbequistão, Tashkent, 100125
N. Turaev
Institute of Ion-Plasma and Laser Technologies
Email: oksengendlerbl@yandex.ru
Uzbequistão, Tashkent, 100125
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