Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

Аннотация

A SiO₂/Si/CoSi₂/Si(111) heterostructure is synthesized via successive Co⁺- and O₂⁺-ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi₂ and SiО₂ layers formed in the surface region are single- and polycrystalline, respectively.