Enviar artigo por via de e-mail Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation
- Autores: Ergashov Y.S.1, Umirzakov B.E.1
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Afiliações:
- Tashkent State Technical University
- Edição: Volume 12, Nº 4 (2018)
- Páginas: 816-818
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195907
- DOI: https://doi.org/10.1134/S1027451018040298
- ID: 195907
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Resumo
A SiO2/Si/CoSi2/Si(111) heterostructure is synthesized via successive Co+- and O2+-ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi2 and SiО2 layers formed in the surface region are single- and polycrystalline, respectively.
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Sobre autores
Y. Ergashov
Tashkent State Technical University
Autor responsável pela correspondência
Email: yergashev@rambler.ru
Uzbequistão, Tashkent, 100095
B. Umirzakov
Tashkent State Technical University
Email: yergashev@rambler.ru
Uzbequistão, Tashkent, 100095
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