Composition and Structure of a Nanofilm Multilayer System of the SiO 2 /Si/CoSi 2 /Si(111) Type Obtained via Ion Implantation

Y. S. Ergashov; B. E. Umirzakov

doi:10.1134/S1027451018040298

Composition and Structure of a Nanofilm Multilayer System of the SiO₂/Si/CoSi₂/Si(111) Type Obtained via Ion Implantation

Authors: Ergashov Y.S.¹, Umirzakov B.E.¹
Affiliations:
1. Tashkent State Technical University
Issue: Vol 12, No 4 (2018)
Pages: 816-818
Section: Article
URL: https://journals.rcsi.science/1027-4510/article/view/195907
DOI: https://doi.org/10.1134/S1027451018040298
ID: 195907

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Abstract
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Abstract

A SiO₂/Si/CoSi₂/Si(111) heterostructure is synthesized via successive Co⁺- and O₂⁺-ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi₂ and SiО₂ layers formed in the surface region are single- and polycrystalline, respectively.

Keywords

nanoscale phases, ion implantation, multilayer system, heterostructure, band-gap width, electron spectroscopy, annealing

About the authors

Y. S. Ergashov

Tashkent State Technical University

Author for correspondence.
Email: yergashev@rambler.ru
Uzbekistan, Tashkent, 100095

B. E. Umirzakov

Tashkent State Technical University

Email: yergashev@rambler.ru
Uzbekistan, Tashkent, 100095

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Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation