Energy-dispersive dependences of the X-ray photoemission of electrons from implanted silicon

Аннотация

The possibilities of interpreting the secondary-electron energy spectra and recording the X-ray photoemission of single-crystal silicon samples are examined. Detected shifts in the energy-spectrum extremum, as well as its height, and the entire energy-distribution form for different types of implanted and annealed Si samples, indicate the degree of ordering of surface atoms. The possibilities of employing the Friedel- oscillation model are discussed.