Мақаланы E-mail арқылы жіберу Procedure for determining defects in sputtered clusters of ionic crystals
- Авторлар: Sharopov U.B.1, Atabaev B.G.1, Djabbarganov R.1, Kurbanov M.K.1, Sharipov M.M.1
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Мекемелер:
- Institute of Ion-Plasma and Laser Technologies
- Шығарылым: Том 10, № 1 (2016)
- Беттер: 245-249
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/188211
- DOI: https://doi.org/10.1134/S1027451016010328
- ID: 188211
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Аннотация
The results obtained using methods of total current spectroscopy (TCS) and secondary-ion mass spectroscopy (SIMS) under ion bombardment of LiF crystals are analyzed. It is shown that the majority of the products of crystal sputtering contain point defects. A procedure for determining defects in sputtered clusters of ionic crystals is developed.
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Авторлар туралы
U. Sharopov
Institute of Ion-Plasma and Laser Technologies
Хат алмасуға жауапты Автор.
Email: utkirstar@gmail.com
Өзбекстан, Tashkent, 100125
B. Atabaev
Institute of Ion-Plasma and Laser Technologies
Email: utkirstar@gmail.com
Өзбекстан, Tashkent, 100125
R. Djabbarganov
Institute of Ion-Plasma and Laser Technologies
Email: utkirstar@gmail.com
Өзбекстан, Tashkent, 100125
M. Kurbanov
Institute of Ion-Plasma and Laser Technologies
Email: utkirstar@gmail.com
Өзбекстан, Tashkent, 100125
M. Sharipov
Institute of Ion-Plasma and Laser Technologies
Email: utkirstar@gmail.com
Өзбекстан, Tashkent, 100125
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