Studying the Formation of Single-Layer Graphene on the Surface of SiC

Аннотация

Regions of single-layer- and bilayer graphene on the surface of thermally processed 4H-SiC substrates are studied using Kelvin probe force microscopy and Raman spectroscopy. We establish experimentally the key parameters of the adopted graphene growth technique which enables the fraction of bilayer graphene to be reduced to a minimum, while samples with a fraction of single-layer graphene as high as 95% are obtained.