On the processes upon the second-photon-stimulated annealing of InAs layers implanted with Be+ ions

Resumo

The results of the second-photon-stimulated annealing of beryllium-implanted InAs layers are presented. The hole and electron concentrations and the activation energy of second-photon-stimulated annealing are calculated for the characteristic temperature regions using thermopower voltage values measured for the implanted layer. The possible mechanisms of the annealing of radiation-induced defects and the activation of beryllium atoms are discussed.