Email this article On the processes upon the second-photon-stimulated annealing of InAs layers implanted with Be+ ions
- Authors: Artamonov A.V.1, Astakhov V.P.1, Karpov V.V.1
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Affiliations:
- OAO “Shvabe Photosystems”
- Issue: Vol 10, No 1 (2016)
- Pages: 43-47
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/187869
- DOI: https://doi.org/10.1134/S1027451016010079
- ID: 187869
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Abstract
The results of the second-photon-stimulated annealing of beryllium-implanted InAs layers are presented. The hole and electron concentrations and the activation energy of second-photon-stimulated annealing are calculated for the characteristic temperature regions using thermopower voltage values measured for the implanted layer. The possible mechanisms of the annealing of radiation-induced defects and the activation of beryllium atoms are discussed.
About the authors
A. V. Artamonov
OAO “Shvabe Photosystems”
Author for correspondence.
Email: art-bass@mail.ru
Russian Federation, Moscow, 117545
V. P. Astakhov
OAO “Shvabe Photosystems”
Email: art-bass@mail.ru
Russian Federation, Moscow, 117545
V. V. Karpov
OAO “Shvabe Photosystems”
Email: art-bass@mail.ru
Russian Federation, Moscow, 117545
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