Email this article Antiferromagnetic inclusions in organic semiconductor (DOEO)4[HgBr4] · TCE
- Authors: Koplak O.V.1, Dmitriev A.I.1,2, Morgunov R.B.1,2
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Affiliations:
- Institute of Problems of Chemical Physics
- Moscow State Transport University
- Issue: Vol 11, No 1 (2017)
- Pages: 114-119
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/190768
- DOI: https://doi.org/10.1134/S1027451016050529
- ID: 190768
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Abstract
The systematic studies of the electronic state of surface layers in organic semiconductor (DOEO)4[HgBr4] · TCE by X-ray photoelectron spectroscopy and UV photoelectron spectroscopy are performed. At temperatures below 50–70 K, a transition to the antiferromagnetic state is observed in inclusions having a different structure compared to the crystal bulk. According to transmission electron microscopy, there are two types of antiferromagnetic inclusions in the samples, with sizes of 2–5 and 100–400 nm. The contributions of antiferromagnetic inclusions and the spins of localized and free charge carriers (holes) to the total magnetic moment of the crystal are separated.
About the authors
O. V. Koplak
Institute of Problems of Chemical Physics
Email: morgunov2005@yandex.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
A. I. Dmitriev
Institute of Problems of Chemical Physics; Moscow State Transport University
Email: morgunov2005@yandex.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432; Moscow, 127994
R. B. Morgunov
Institute of Problems of Chemical Physics; Moscow State Transport University
Author for correspondence.
Email: morgunov2005@yandex.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432; Moscow, 127994
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