Отправить статью по E-mail Antiferromagnetic inclusions in organic semiconductor (DOEO)4[HgBr4] · TCE
- Авторы: Koplak O.V.1, Dmitriev A.I.1,2, Morgunov R.B.1,2
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Учреждения:
- Institute of Problems of Chemical Physics
- Moscow State Transport University
- Выпуск: Том 11, № 1 (2017)
- Страницы: 114-119
- Раздел: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/190768
- DOI: https://doi.org/10.1134/S1027451016050529
- ID: 190768
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Аннотация
The systematic studies of the electronic state of surface layers in organic semiconductor (DOEO)4[HgBr4] · TCE by X-ray photoelectron spectroscopy and UV photoelectron spectroscopy are performed. At temperatures below 50–70 K, a transition to the antiferromagnetic state is observed in inclusions having a different structure compared to the crystal bulk. According to transmission electron microscopy, there are two types of antiferromagnetic inclusions in the samples, with sizes of 2–5 and 100–400 nm. The contributions of antiferromagnetic inclusions and the spins of localized and free charge carriers (holes) to the total magnetic moment of the crystal are separated.
Об авторах
O. Koplak
Institute of Problems of Chemical Physics
Email: morgunov2005@yandex.ru
Россия, Chernogolovka, Moscow oblast, 142432
A. Dmitriev
Institute of Problems of Chemical Physics; Moscow State Transport University
Email: morgunov2005@yandex.ru
Россия, Chernogolovka, Moscow oblast, 142432; Moscow, 127994
R. Morgunov
Institute of Problems of Chemical Physics; Moscow State Transport University
Автор, ответственный за переписку.
Email: morgunov2005@yandex.ru
Россия, Chernogolovka, Moscow oblast, 142432; Moscow, 127994
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