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Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
Rysbaev A.S., Khujaniyozov J.B., Bekpulatov I.R., Rakhimov A.M., Pardaev O.R.
Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films
Umirzakov B.E., Tashmukhamedova D.A., Rabbimov E.M., Sodikjanov J.S., Urokov A.N.
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