Email this article Features of the Initial Growth Stages of ZnO Films on the Rhombohedral Plane of Sapphire
- Authors: Muslimov A.E.1, Ismailov A.M.2, Babaev V.A.2, Kanevsky V.M.1
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Affiliations:
- Federal Scientific Research Center “Crystallography and Photonics”, Shubnikov Institute of Crystallography, Russian Academy of Sciences
- Dagestan State University
- Issue: Vol 13, No 6 (2019)
- Pages: 1234-1238
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196557
- DOI: https://doi.org/10.1134/S1027451019060429
- ID: 196557
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Abstract
The initial growth stages of (11\(\bar {2}\)0) ZnO films on the rhombohedral plane of sapphire are studied. Grains of parasitic orientations are found to form at early growth stages. The pre-growth annealing of sapphire substrates at temperatures above 1000°C results in suppression of the growth of these grains. The presence of round and polygonal grains in (11\(\bar {2}\)0) ZnO films is explained from the standpoint of the cluster-growth mechanism.
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About the authors
A. E. Muslimov
Federal Scientific Research Center “Crystallography and Photonics”, Shubnikov Institute of Crystallography,Russian Academy of Sciences
Author for correspondence.
Email: amuslimov@mail.ru
Russian Federation, Moscow, 119333
A. M. Ismailov
Dagestan State University
Email: amuslimov@mail.ru
Russian Federation, Makhachkala, 367000
V. A. Babaev
Dagestan State University
Email: amuslimov@mail.ru
Russian Federation, Makhachkala, 367000
V. M. Kanevsky
Federal Scientific Research Center “Crystallography and Photonics”, Shubnikov Institute of Crystallography,Russian Academy of Sciences
Email: amuslimov@mail.ru
Russian Federation, Moscow, 119333
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