On the Change in the Reflectance of Мо(111) Mirrors after Exposure to D2–N2 Plasma
- Authors: Gorodetsky A.E.1, Bukhovets V.L.1, Markin A.V.1, Voytitsky V.L.1, Rybkina T.V.1, Zalavutdinov R.K.1, Zakharov A.P.1, Zolotarevsky V.I.1, Arkhipushkin I.A.1, Kazansky L.P.1
-
Affiliations:
- Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
- Issue: Vol 13, No 6 (2019)
- Pages: 1045-1053
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196504
- DOI: https://doi.org/10.1134/S1027451019060077
- ID: 196504
Cite item
Abstract
The effect of D2–N2 glow discharge plasma on the reflectivity of single-crystal Mo(111) mirrors is studied. The surface of each mirror is processed by mechanical polishing with diamond pastes to a roughness of hq = 5 nm. During polishing, abrasive particles are embedded in the surface layer of the mirror. Exposure to an ion fluence of 1.4 × 1024 m–2 leads to an increase in hq = 7 nm. After irradiation and the removal of a 30 nm-thick Mo layer the total reflection coefficient Rt in a 400–1000 nm region increases by 5–10% to a steady-state value (56–58)%. The increase in Rt may be caused by the preferential removal of carbon during the ion-sputtering process.
About the authors
A. E. Gorodetsky
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Author for correspondence.
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
V. L. Bukhovets
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
A. V. Markin
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
V. L. Voytitsky
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
T. V. Rybkina
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
R. Kh. Zalavutdinov
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
A. P. Zakharov
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
V. I. Zolotarevsky
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
I. A. Arkhipushkin
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
L. P. Kazansky
Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences
Email: aegorodetsky@mail.ru
Russian Federation, Moscow, 119991
Supplementary files
