High resolution X-ray studies of porous PbTe layers on silicon substrates
- Авторлар: Mamontov A.I.1, Petrakov A.P.2
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Мекемелер:
- Vyatka State University
- Syktyvkar State University
- Шығарылым: Том 11, № 3 (2017)
- Беттер: 538-543
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/193003
- DOI: https://doi.org/10.1134/S1027451017030107
- ID: 193003
Дәйексөз келтіру
Аннотация
The structure of PbTe films after anodic electrochemical etching in Norr electrolyte is studied by high resolution X-ray diffractometry and reflectometry. Lattice defects before and after etching are estimated. The quantitative parameters of the pores are determined. The advantage of the complex application of high resolution X-ray methods for the determination of the real structure of lead-telluride porous films is shown.
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Авторлар туралы
A. Mamontov
Vyatka State University
Хат алмасуға жауапты Автор.
Email: snowchek@mail.ru
Ресей, Kirov, 610000
A. Petrakov
Syktyvkar State University
Email: snowchek@mail.ru
Ресей, Syktyvkar, 167001
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