Studying the formation of a true-secondary-electron signal in the low-voltage SEM mode

V. V. Kazmiruk; I. G. Kurganov; N. N. Osipov; A. A. Podkopaev; T. N. Savitskaya

doi:10.1134/S1027451017020288

Studying the formation of a true-secondary-electron signal in the low-voltage SEM mode

作者: Kazmiruk V.V.¹, Kurganov I.G.¹, Osipov N.N.¹, Podkopaev A.A.¹, Savitskaya T.N.¹
隶属关系:
1. Institute of Microelectronics Technology and High Purity Materials
期: 卷 11, 编号 2 (2017)
页面: 404-407
栏目: Article
URL: https://journals.rcsi.science/1027-4510/article/view/192425
DOI: https://doi.org/10.1134/S1027451017020288
ID: 192425

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详细

A mathematical model of a SEM (scanning electron microscopy) signal formed by true secondary electrons, i.e., electrons emitted by a sample under the action of primary and inelastically scattered electrons, is proposed. Good agreement between the simulated signals and experimental results obtained on an Auriga (Carl Zeiss) device is attained.