Influence of nickel impurities on the operational parameters of a silicon solar cell

Z. T. Kenzhaev; Кенжаев З. Т.; N. F. Zikrillaev; Зикриллаев Н. Ф.; V. B. Odzhaev; Оджаев В. Б.; K. A. Ismailov; Исмайлов К. А.; V. S. Prosolovich; Просолович В. С.; Kh. F. Zikrillaev; Зикриллаев Х. Ф.; S. V. Koveshnikov; Ковешников С. В.

Influence of nickel impurities on the operational parameters of a silicon solar cell

作者: Kenzhaev Z.¹, Zikrillaev N.¹, Odzhaev V.², Ismailov K.³, Prosolovich V.², Zikrillaev K.¹, Koveshnikov S.¹
隶属关系:
1. Tashkent State Technical University
2. Belarussian State University
3. Karakalpak State University
期: 卷 53, 编号 2 (2024)
页面: 169-178
栏目: ТЕХНОЛОГИИ
URL: https://journals.rcsi.science/0544-1269/article/view/262768
ID: 262768

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
全文:
作者简介
参考
补充文件
统计

详细

The results of studies of the influence of nickel impurities introduced by diffusion into monocrystalline silicon on the characteristics of solar cells are presented. It has been established that doping with nickel atoms makes it possible to increase the lifetime of minority charge carriers in the material by up to 2 times, and the efficiency of solar cells by 20–25%. It was shown that the distribution of nickel clusters in the volume of the material is almost uniform, and their size does not exceed 0.5 μm. The concentration of clusters in the volume is ~1011–1013 cm–3, and in the near-surface layer — ~1013–1015 cm–3. The physical mechanisms of the influence of bulk and near-surface clusters of nickel atoms on the efficiency of silicon solar cells have been identified. It has been established experimentally that the processes of gettering of recombination-active technological impurities by nickel clusters, which occur in the nickel-enriched front surface region of solar cells, play a decisive role in increasing their efficiency.

关键词

silicon solar cell, diffusion, nickel clusters, recombination centers, gettering

全文:

参考

Green M. et al. Solar cell efficiency tables (version 58) // Prog Photovolt Res Appl. 2021. V. 29. P. 657–667. https://doi.org/10.1002/pip.3444
Ikhmayies Sh. Advances in Silicon Solar Cells // Springer International Publishing. 2018. P. 337. https://doi.org/10.1007/978-3-319-69703-1
Panaiotti I.E., Terukov E.I. A Study of the Effect of Radiation on Recombination Loss in Heterojunction Solar Cells Based on Single-Crystal Silicon // Tech. Phys. Lett. 2019. V. 45. Nо. 3. P. 193–196. https://doi.org/10.1134/S106378501903012X
Richter A. et al. Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses // Nature Energy. 2021. V. 6. P. 429–438. https://doi.org/10.1038/s41560-021-00805-w
Koval’chuk N.S. et al. Yankovskii Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes // Russian Microelectronics. 2023. V. 52. No. 4. Р. 276–282. DOI: S054412692370045X.
Yatsukhnenko S. et al. Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity // Nanoscale Res Lett. 2017. V. 12. Nо. 78. P. 1–7. https://doi.org/10.1186/s11671-017-1855-9
Liu A., Phang S.P., Macdonald D. Gettering in silicon photovoltaics: A review // Solar Energy Materials and Solar Cells. 2022. V. 234. P. 111447. https://doi.org/10.1016/j.solmat.2021.111447
Chistyakova A.A., Bazhanov D.I. The Study of Nickel Impurity Segregation on LSNT Perovskite Open Surfaces by Ab Initio Molecular Dynamics // Russ Microelectron. 2022. V. 51. P. 654–658. https://doi.org/10.1134/S1063739722080121
Bayrambay I. et al. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice // AIP Conference Proceedings. 2022. V. 2552. P. 060015. https://doi.org/10.1063/5.0129486
Spit F.H.M., Gupta D., Tu K.N. Diffusivity and solubility of Ni (63Ni) in monocrystalline Si // Phys. Review B. 1989. V. 39. P. 1255–1260.
Lindroos J. et al. Nickel: A very fast diffuser in silicon // J. Appl. Phys. 2013. V. 113. P. 204906. https://doi.org/10.1063/1.4807799
Bakhadyrkhanov M.K. et al. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p—n-Junction // Tech. Phys. Lett. 2019. V. 45. Nо. 10. P. 959–962. https://doi.org/10.1134/S1063785019100031
Bakhadyrkhanov M.K. et al. Silicon Photovoltaic Cells with Deep p—n-Junction // Appl. Sol. Energy. 2020. V. 56. Nо. 1. P. 13–17. https://doi.org/10.3103/S0003701X2001003X
Bakhadyrkhanov M.K., Kenzhaev Z.T. Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells // Tech. Phys. 2021. V. 66. Nо. 7. P. 851–856. https://doi.org/10.1134/S1063784221060049
Bakhadirkhanov M.K. et al. Gettering properties of nickel in silicon photocells // Tech. Phys. 2022. V. 67. Nо. 14. P. 2217–2220. doi: 10.21883/TP.2022.14.55221.99-21.
Zikrillayev N. et al. Effect of nickel doping on the spectral sensitivity of silicon solar cells // E3S Web of Conferences. 2023. V. 434. P. 01036 (1–3). https://doi.org/10.1051/e3sconf/202343401036
Kenzhaev Z.T. et al. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping // Surf. Engin. Appl. Electrochem. 2023. V. 59. Nо. 6. P. 858–866. https://doi.org/10.3103/S1068375523060108
Kerimov E.A. Study of Photodetectors with Schottky Barriers Based on the IrSi—Si Contact // Russ Microelectron. 2023. V. 52. P. 32–34. https://doi.org/10.1134/S1063739722030040
Dubovikov K.M., Kovaleva M.A. Effect of Annealing Temperature on the Surface Structure and Properties of Porous TiNi // Inorg. Mater. 2021. Nо. 57. P. 1242–1249. https://doi.org/10.1134/S0020168521120050
Koveshnikov S., Kononchuk O. Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon // Appl. Phys. Lett. 1998. V. 73. Nо. 16. P. 2340. https://doi.org/10.1063/1.122455
Togatov V.V., Gnatyuk P.A. A method for measuring the lifetime of charge carriers in the base regions of high-speed diode structures // Semiconductors. 2005. V. 39. P. 360–363. https://doi.org/10.1134/1.1882802
Mil’vidskii M.G., Chaldyshev V.V. Nanometer-size atomic clusters in semiconductors — a new approach to tailoring material properties // Semiconductors. 1998. V. 32. Nо. 5. P. 457–465. https://doi.org/10.1063/1.4807799
Gafner Y.Y., Gafner S.L., Entel P. Formation of an icosahedral structure during crystallization of nickel nanoclusters // Phys. Solid State. 2004. V. 46. No. 7. P. 1327–1330. https://doi.org/10.1134/1.1778460
Tanaka Sh., Ikari T., Kitagawa H. In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon // Jpn. J. Appl. Phys. 2001. V. 40. No. 5R. P. 3063–3068. doi: 10.1143/JJAP.40.3063.
Ismaylov B.K. et al. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon // Physical Sciences and Technology. 2023. V. 10. Nо. 1. P. 13–18. https://doi.org/10.26577/phst.2023.v10.i1.02
Serafina B. Conversion of solar energy. Moscow: Energoizdat, 1982. 320 p. [in Russian].
Emslie J. Elements: Directory. Translation from English. Moscow, 1993. 256 p. [in Russian].
Afanasyeva N.P., Brinkevich D.I., Prosolovich V.S., Yankovsky Y.N. Lanthanoid doping of silicon as a way to optimize the parameters of ionizing radiation detectors // Instrumentation and Experimental Technique. 2002. No. 2. P. 24–26 (in Russian).
Dutov A.G., Komar V.A., Petrov V.V., Prosolovich V.S., Chesnokov S.A., Yankovsky Y.N. Getterization of technological impurities by rare-earth elements in silicon // Proceedings of the 7th Intern. Conf. on Microelectronics. Minsk, 1990. No. 1. P. 34–36 [in Russian].
Egorov S.N. Calculation of the surface energy of metals in the solid state // Izvestiya Vuzov. North-Caucasian region. 2003. No. 3. P. 132–136 [in Russian].
Dellis S. et al. Electrochemical synthesis of large diameter monocrystalline nickel nanowires in porous alumina membranes // J. Appl. Phys. 2013. V. 114. P. 164308. https://doi.org/10.1063/1.4826900