Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides

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Resumo

The results of studying the processes of formation of nanolayers of silicon oxide by the method of molecular layering (atomic layer deposition) on the surface of films of tantalum and niobium oxides obtained by electrochemical oxidation of the corresponding metals are presented. A study of the electrical strength of metal-dielectric-metal (MDM) structures based on tantalum and niobium oxides showed that the introduction of an additive dielectric layer (SiO2) can significantly increase the electrical strength of these structures.

Sobre autores

Yu. Ezhovskii

St. Petersburg State Technological Institute (Technical University)

Autor responsável pela correspondência
Email: ezhovski1@mail.ru
Rússia, St. Petersburg

S. Mikhailovskii

St. Petersburg State Technological Institute (Technical University)

Email: ezhovski1@mail.ru
Rússia, St. Petersburg

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2. Fig. 1. Variation of the specific capacitance of MDM-structures from the additive layer thickness d2 for (Nb2O5+SiO2) structures: 1-4 - experimental curves for the thicknesses of the main dielectric (Nb2O5) d1 = 100, 150, 200 and 250 nm, respectively; 1a-4a - calculated curves for the same thicknesses

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3. Fig. 2. Effect of additive layer thickness d2 on the dielectric loss angle tangent: lines 1, 2 - (Ta2O5 + SiO2); 3, 4 - (Nb2O5 + SiO2); 1, 3 - d1 = 250 nm; 2, 4 - d1 = 100 nm

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4. Fig. 3. Dependence of the breakdown field strength on the number of microbreakdowns in structures with single-layer (1, 3) and double-layer (2, 4) dielectric with thickness d2 = 4 nm: 1 - Nb2O5; 2 - (Nb2O5+SiO2); 3 - Ta2O5; 4 - (Ta2O5+SiO2)

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5. Fig. 4. Dependence of electrical strength on anode dielectric thickness for Ta/Ta2O5/SiO2/Au (a) and Nb/Nb2O5/SiO2/Au (b) structures; curves: 1 - d2 = 0; 2 - d2 = 3 nm; 3 - d2 = 5 nm; 4 - d2 = 7.5 nm

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