Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire

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Resumo

A design-topological solution for a tunnel field-effect transistor of a new type is proposed and the simulation of the transistor is performed. The device is a vertical ballistic field-effect transistor with a cylindrical metallic gate based on a cylindrical undoped AlxGa1–xAs quantum nanowire located in an Al2O3 matrix. For a given geometry of the device structure, the optimum of the fraction of aluminum in the semiconductor composition varying along the transistor channel is found, at which, unlike a conventional tunnel field-effect transistor, not only the complete suppression of the quantum barrier for electrons by a positive gate voltage is ensured, but also the minimum possible electrical resistance of the transistor channel. The current-voltage characteristics of the transistor are calculated within the framework of a rigorous quantum-mechanical description of the electron transport in its channel, taking into account the non-parabolic nature of the band structure of the semiconductor.

Sobre autores

D. Pozdnyakov

Belarusian state university

Email: pozdnyakov@tut.by
Nezavisimosty av., 4, Minsk, 220030 Belarus

A. Borzdov

Belarusian state university

Email: BorzdovAV@bsu.by
Nezavisimosty av., 4, Minsk, 220030 Belarus

V. Borzdov

Belarusian state university

Autor responsável pela correspondência
Email: Borzdov@bsu.by
Nezavisimosty av., 4, Minsk, 220030 Belarus

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Declaração de direitos autorais © Д.В. Поздняков, А.В. Борздов, В.М. Борздов, 2023

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