Properties of percolation channels in planar memristive structures base on epitaxial films of oxide perovskite compounds YBa 2 Cu 3 O 7 – δ  and La 1 –  x  Sr  x  MnO 3 – δ

A. N. Rossolenko; Россоленко А. Н.; N. A. Tulina; Тулина Н. А.; I. M. Shmytko; Шмытько И. М.; А. А. Ivanov; Иванов А. А.; A. V. Zotov; Зотов А. В.; I. Y. Borisenko; Борисенко И. Ю.; V. V. Sirotkin; Сироткин В. В.; V. A. Tulin; Тулин В. А.

doi:10.31857/S036767652270096X

Properties of percolation channels in planar memristive structures base on epitaxial films of oxide perovskite compounds YBa₂Cu₃O_7 – δ and La_1 – xSr_xMnO_3 – δ

Авторлар: Rossolenko A.¹, Tulina N.¹, Shmytko I.¹, Ivanov А.², Zotov A.³, Borisenko I.³, Sirotkin V.³, Tulin V.³
Мекемелер:
1. Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
2. National Research Nuclear University Moscow Engineering Physics Institute (MEPhI)
3. Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences
Шығарылым: Том 87, № 4 (2023)
Беттер: 541-545
Бөлім: Articles
URL: https://journals.rcsi.science/0367-6765/article/view/135359
DOI: https://doi.org/10.31857/S036767652270096X
EDN: https://elibrary.ru/NOXZNR
ID: 135359

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

The choice of base materials and the use of their functional properties in the development of the structure and elucidation of the mechanism of resistive switching has been analyzed. Mesoscopic heterostructures based on epitaxial oriented 〈001〉 films of high-temperature superconductor YBa₂Cu₃O_{7 – δ} and doped manganite La_{1 –} _xSr_xMnO_{3 – δ}, were obtained, and the properties of percolation channels of structures based on these compounds were studied. The effects of “self-adapting electroforming” in microcontact heterostructures based on epitaxial films of manganite are observed. Numerical calculations using the critical electric field model have shown that “self-electroforming” occurs in strong electric fields and a gap structure is formed in the contact zone. This structure provides reproducibility of resistive switching.

Әдебиет тізімі

Li Y., Wang Z., Midya R. et al. // J. Phys. D. 2018. V. 51. Art. No. 503002.
Wang C., Wu H., Gao B., Zhang et al. // Microelectron. Engin. 2018. V. 187–188. P. 121.
Perez-Tomas A. // Adv. Mater. Interfaces. 2019. V. 6. Art. No. 1970096.
Tulina N.A., Ivanov A.A. // J. Supercond. Nov. Magn. 2020. V. 33. P. 2279.
Тулина Н.А., Сироткин В.В., Борисенко И.Ю., Иванов А.А. // Изв. РАН. Сер. физ. 2013. Т. 77. № 3. С. 297; Tulina N.A., Sirotkin V.V., Borisenko I.Yu., Ivanov A.A. // Bull. Russ. Acad. Sci. Phys. 2013. V. 77. No. 3. P. 265.
Tulina N.A., Rossolenko A.N., Shmytko I.M. et al. // J. Supercond. Sci. Technol. 2019. V. 32. P. 5003.
Тулина Н.А., Россоленко А.Н., Шмытько И.М. и др. // Наноиндустрия. 2019. Т. 89. С. 237.
Tulina N.A., Borisenko I.Yu., Shmytko I.M. et al. // J. Supercond. Nov. Magn. 2020. V. 33. P. 3695.
Pickett W. E., Singh D.J., Krakauer H., Cohen R.E. // Science. 1992. V. 255. No. 5040. P. 46.
Dagotto E., Hotta N., Moreo A. // Phys. Reports. 2001. V. 344. P. 1.
Байков Ю.М., Никулин Е.И., Мелех Б.Т., Егоров В.М. // ФТТ. 2004. Т. 46. № 11. С. 2018.
Chaika A.N., Ionov A.M., Tulina N.A. et al. // J. Electron Spectrosc. Relat. Phenom. 2005. V. 148. P. 101.
Yanson I.K. // Low Temp. Phys. 1983. V. 6. P. 676.
Sano Y. // J. Appl. Phys. 1985. V. 58. P. 2651.
Jorgensen J. // Phys. Rev. B. 1990. V. 41. P. 1863.
Dagotto E. // Rev. Mod. Phys. 1994. V. 66. P. 763.
Hudgins J. // J. Electron. Mater. 2003. V. 33. P. 471.