Properties of percolation channels in planar memristive structures base on epitaxial films of oxide perovskite compounds YBa2Cu3O7 – δ and La1 – xSrxMnO3 – δ

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Resumo

The choice of base materials and the use of their functional properties in the development of the structure and elucidation of the mechanism of resistive switching has been analyzed. Mesoscopic heterostructures based on epitaxial oriented 〈001〉 films of high-temperature superconductor YBa2Cu3O7 – δ and doped manganite La1 – xSrxMnO3 – δ, were obtained, and the properties of percolation channels of structures based on these compounds were studied. The effects of “self-adapting electroforming” in microcontact heterostructures based on epitaxial films of manganite are observed. Numerical calculations using the critical electric field model have shown that “self-electroforming” occurs in strong electric fields and a gap structure is formed in the contact zone. This structure provides reproducibility of resistive switching.

Sobre autores

A. Rossolenko

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russia, 142432, Chernogolovka

N. Tulina

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Autor responsável pela correspondência
Email: tulina@issp.ac.ru
Russia, 142432, Chernogolovka

I. Shmytko

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russia, 142432, Chernogolovka

А. Ivanov

National Research Nuclear University Moscow Engineering Physics Institute (MEPhI)

Email: tulina@issp.ac.ru
Russia, 115409, Moscow

A. Zotov

Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russia, 142432, Chernogolovka

I. Borisenko

Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russia, 142432, Chernogolovka

V. Sirotkin

Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russia, 142432, Chernogolovka

V. Tulin

Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences

Email: tulina@issp.ac.ru
Russia, 142432, Chernogolovka

Bibliografia

  1. Li Y., Wang Z., Midya R. et al. // J. Phys. D. 2018. V. 51. Art. No. 503002.
  2. Wang C., Wu H., Gao B., Zhang et al. // Microelectron. Engin. 2018. V. 187–188. P. 121.
  3. Perez-Tomas A. // Adv. Mater. Interfaces. 2019. V. 6. Art. No. 1970096.
  4. Tulina N.A., Ivanov A.A. // J. Supercond. Nov. Magn. 2020. V. 33. P. 2279.
  5. Тулина Н.А., Сироткин В.В., Борисенко И.Ю., Иванов А.А. // Изв. РАН. Сер. физ. 2013. Т. 77. № 3. С. 297; Tulina N.A., Sirotkin V.V., Borisenko I.Yu., Ivanov A.A. // Bull. Russ. Acad. Sci. Phys. 2013. V. 77. No. 3. P. 265.
  6. Tulina N.A., Rossolenko A.N., Shmytko I.M. et al. // J. Supercond. Sci. Technol. 2019. V. 32. P. 5003.
  7. Тулина Н.А., Россоленко А.Н., Шмытько И.М. и др. // Наноиндустрия. 2019. Т. 89. С. 237.
  8. Tulina N.A., Borisenko I.Yu., Shmytko I.M. et al. // J. Supercond. Nov. Magn. 2020. V. 33. P. 3695.
  9. Pickett W. E., Singh D.J., Krakauer H., Cohen R.E. // Science. 1992. V. 255. No. 5040. P. 46.
  10. Dagotto E., Hotta N., Moreo A. // Phys. Reports. 2001. V. 344. P. 1.
  11. Байков Ю.М., Никулин Е.И., Мелех Б.Т., Егоров В.М. // ФТТ. 2004. Т. 46. № 11. С. 2018.
  12. Chaika A.N., Ionov A.M., Tulina N.A. et al. // J. Electron Spectrosc. Relat. Phenom. 2005. V. 148. P. 101.
  13. Yanson I.K. // Low Temp. Phys. 1983. V. 6. P. 676.
  14. Sano Y. // J. Appl. Phys. 1985. V. 58. P. 2651.
  15. Jorgensen J. // Phys. Rev. B. 1990. V. 41. P. 1863.
  16. Dagotto E. // Rev. Mod. Phys. 1994. V. 66. P. 763.
  17. Hudgins J. // J. Electron. Mater. 2003. V. 33. P. 471.

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Declaração de direitos autorais © А.Н. Россоленко, Н.А. Тулина, И.М. Шмытько, А.А. Иванов, А.В. Зотов, И.Ю. Борисенко, В.В. Сироткин, В.А. Тулин, 2023

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