Surface Protection of Low-Melting Glass Based Silicon Substrates for Silicon Transistor Fabrication
- Авторлар: Ismailov T.A.1, Sarkarov T.É.1, Shangereeva B.A.1, Shakhmaeva A.R.1
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Мекемелер:
- Dagestan State Technical University
- Шығарылым: Том 74, № 5-6 (2017)
- Беттер: 169-171
- Бөлім: Coatings
- URL: https://journals.rcsi.science/0361-7610/article/view/244823
- DOI: https://doi.org/10.1007/s10717-017-9954-8
- ID: 244823
Дәйексөз келтіру
Аннотация
Different methods are proposed for protecting the surfaces of silicon substrates in the fabrication of silicon transistors. The results of thermal operations with technological regimes for obtaining a low-melting glassy layer in order to protect the surface of p – n junction substrates from different external actions are presented.
Авторлар туралы
T. Ismailov
Dagestan State Technical University
Хат алмасуға жауапты Автор.
Email: bijke@mail.ru
Ресей, Makhachkala, Dagestan
T. Sarkarov
Dagestan State Technical University
Email: bijke@mail.ru
Ресей, Makhachkala, Dagestan
B. Shangereeva
Dagestan State Technical University
Email: bijke@mail.ru
Ресей, Makhachkala, Dagestan
A. Shakhmaeva
Dagestan State Technical University
Email: bijke@mail.ru
Ресей, Makhachkala, Dagestan
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