Surface Protection of Low-Melting Glass Based Silicon Substrates for Silicon Transistor Fabrication


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Different methods are proposed for protecting the surfaces of silicon substrates in the fabrication of silicon transistors. The results of thermal operations with technological regimes for obtaining a low-melting glassy layer in order to protect the surface of p – n junction substrates from different external actions are presented.

作者简介

T. Ismailov

Dagestan State Technical University

编辑信件的主要联系方式.
Email: bijke@mail.ru
俄罗斯联邦, Makhachkala, Dagestan

T. Sarkarov

Dagestan State Technical University

Email: bijke@mail.ru
俄罗斯联邦, Makhachkala, Dagestan

B. Shangereeva

Dagestan State Technical University

Email: bijke@mail.ru
俄罗斯联邦, Makhachkala, Dagestan

A. Shakhmaeva

Dagestan State Technical University

Email: bijke@mail.ru
俄罗斯联邦, Makhachkala, Dagestan

补充文件

附件文件
动作
1. JATS XML

版权所有 © Springer Science+Business Media, LLC, 2017