Surface Protection of Low-Melting Glass Based Silicon Substrates for Silicon Transistor Fabrication
- Авторы: Ismailov T.A.1, Sarkarov T.É.1, Shangereeva B.A.1, Shakhmaeva A.R.1
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Учреждения:
- Dagestan State Technical University
- Выпуск: Том 74, № 5-6 (2017)
- Страницы: 169-171
- Раздел: Coatings
- URL: https://journals.rcsi.science/0361-7610/article/view/244823
- DOI: https://doi.org/10.1007/s10717-017-9954-8
- ID: 244823
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Аннотация
Different methods are proposed for protecting the surfaces of silicon substrates in the fabrication of silicon transistors. The results of thermal operations with technological regimes for obtaining a low-melting glassy layer in order to protect the surface of p – n junction substrates from different external actions are presented.
Об авторах
T. Ismailov
Dagestan State Technical University
Автор, ответственный за переписку.
Email: bijke@mail.ru
Россия, Makhachkala, Dagestan
T. Sarkarov
Dagestan State Technical University
Email: bijke@mail.ru
Россия, Makhachkala, Dagestan
B. Shangereeva
Dagestan State Technical University
Email: bijke@mail.ru
Россия, Makhachkala, Dagestan
A. Shakhmaeva
Dagestan State Technical University
Email: bijke@mail.ru
Россия, Makhachkala, Dagestan
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