电邮这篇文章 Molecular layering of silicon and aluminum oxides on binary semiconductors
- 作者: Ezhovskii Y.1
-
隶属关系:
- St. Petersburg State Technological Institute (Technical University)
- 期: 卷 91, 编号 4 (2017)
- 页面: 739-743
- 栏目: Physical Chemistry of Nanoclusters and Nanomaterials
- URL: https://journals.rcsi.science/0036-0244/article/view/169421
- DOI: https://doi.org/10.1134/S0036024417040070
- ID: 169421
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详细
The formation of nanolayers of silicon and aluminum oxides, obtained by means of molecular layering (or atomic layer deposition (ALD technology)) on surfaces of GaAs, InAs, and InSb, is investigated. Conditions for the layer-wise growth of surface nanostructures are established, and some of their dielectric characteristics are estimated.
作者简介
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
编辑信件的主要联系方式.
Email: office@technolog.edu.ru
俄罗斯联邦, St. Petersburg, 190013
