Email this article Molecular layering of silicon and aluminum oxides on binary semiconductors
- Authors: Ezhovskii Y.K.1
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Affiliations:
- St. Petersburg State Technological Institute (Technical University)
- Issue: Vol 91, No 4 (2017)
- Pages: 739-743
- Section: Physical Chemistry of Nanoclusters and Nanomaterials
- URL: https://journals.rcsi.science/0036-0244/article/view/169421
- DOI: https://doi.org/10.1134/S0036024417040070
- ID: 169421
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Abstract
The formation of nanolayers of silicon and aluminum oxides, obtained by means of molecular layering (or atomic layer deposition (ALD technology)) on surfaces of GaAs, InAs, and InSb, is investigated. Conditions for the layer-wise growth of surface nanostructures are established, and some of their dielectric characteristics are estimated.
About the authors
Yu. K. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Author for correspondence.
Email: office@technolog.edu.ru
Russian Federation, St. Petersburg, 190013
