Мақаланы E-mail арқылы жіберу Molecular layering of silicon and aluminum oxides on binary semiconductors
- Авторлар: Ezhovskii Y.1
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Мекемелер:
- St. Petersburg State Technological Institute (Technical University)
- Шығарылым: Том 91, № 4 (2017)
- Беттер: 739-743
- Бөлім: Physical Chemistry of Nanoclusters and Nanomaterials
- URL: https://journals.rcsi.science/0036-0244/article/view/169421
- DOI: https://doi.org/10.1134/S0036024417040070
- ID: 169421
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Аннотация
The formation of nanolayers of silicon and aluminum oxides, obtained by means of molecular layering (or atomic layer deposition (ALD technology)) on surfaces of GaAs, InAs, and InSb, is investigated. Conditions for the layer-wise growth of surface nanostructures are established, and some of their dielectric characteristics are estimated.
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Авторлар туралы
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Хат алмасуға жауапты Автор.
Email: office@technolog.edu.ru
Ресей, St. Petersburg, 190013
