Enviar artigo por via de e-mail Molecular layering of silicon and aluminum oxides on binary semiconductors
- Autores: Ezhovskii Y.1
-
Afiliações:
- St. Petersburg State Technological Institute (Technical University)
- Edição: Volume 91, Nº 4 (2017)
- Páginas: 739-743
- Seção: Physical Chemistry of Nanoclusters and Nanomaterials
- URL: https://journals.rcsi.science/0036-0244/article/view/169421
- DOI: https://doi.org/10.1134/S0036024417040070
- ID: 169421
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The formation of nanolayers of silicon and aluminum oxides, obtained by means of molecular layering (or atomic layer deposition (ALD technology)) on surfaces of GaAs, InAs, and InSb, is investigated. Conditions for the layer-wise growth of surface nanostructures are established, and some of their dielectric characteristics are estimated.
Palavras-chave
Sobre autores
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Autor responsável pela correspondência
Email: office@technolog.edu.ru
Rússia, St. Petersburg, 190013
