The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures
- 作者: Belorusov D.1, Goldman E.1, Chucheva G.1
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隶属关系:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
- 期: 卷 68, 编号 9 (2023)
- 页面: 917-920
- 栏目: К 70-ЛЕТИЮ ИРЭ ИМ. В.А. КОТЕЛЬНИКОВА РАН
- URL: https://journals.rcsi.science/0033-8494/article/view/138429
- DOI: https://doi.org/10.31857/S0033849423090036
- EDN: https://elibrary.ru/SBHPRG
- ID: 138429
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详细
The manifestation of the Franz–Keldysh effect was discovered when illuminated by indirect daylight Al–n+-Si:P–SiO2–(100) n-Si structures with ultrathin (3.7 nm) oxide. It has been shown that the use of backlight even at low field voltages (up to 3 V) leads to an increase in the tunneling current through the oxide compared to the current in darkness by three orders of magnitude. A model of the influence of radiation on the process of electron tunneling through an ultrathin insulating layer has been constructed. At first as a result of the Franz–Keldysh effect, a radiation quantum is captured by an electron and this charge carrier tunnels through the barrier at a higher level compared to darkness. After a charge carrier enters a semiconductor, its energy is sufficient for several events of electron–hole pair production during impact ionization of silicon.
作者简介
D. Belorusov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
E. Goldman
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
G. Chucheva
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
编辑信件的主要联系方式.
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
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