The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures
- Autores: Belorusov D.1, Goldman E.1, Chucheva G.1
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Afiliações:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
- Edição: Volume 68, Nº 9 (2023)
- Páginas: 917-920
- Seção: К 70-ЛЕТИЮ ИРЭ ИМ. В.А. КОТЕЛЬНИКОВА РАН
- URL: https://journals.rcsi.science/0033-8494/article/view/138429
- DOI: https://doi.org/10.31857/S0033849423090036
- EDN: https://elibrary.ru/SBHPRG
- ID: 138429
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Resumo
The manifestation of the Franz–Keldysh effect was discovered when illuminated by indirect daylight Al–n+-Si:P–SiO2–(100) n-Si structures with ultrathin (3.7 nm) oxide. It has been shown that the use of backlight even at low field voltages (up to 3 V) leads to an increase in the tunneling current through the oxide compared to the current in darkness by three orders of magnitude. A model of the influence of radiation on the process of electron tunneling through an ultrathin insulating layer has been constructed. At first as a result of the Franz–Keldysh effect, a radiation quantum is captured by an electron and this charge carrier tunnels through the barrier at a higher level compared to darkness. After a charge carrier enters a semiconductor, its energy is sufficient for several events of electron–hole pair production during impact ionization of silicon.
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Sobre autores
D. Belorusov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
E. Goldman
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
G. Chucheva
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch
Autor responsável pela correspondência
Email: gvc@ms.ire.rssi.ru
Fryazino, Moscow oblast, 141190 Russia
Bibliografia
- Zwanenburg F.A., Dzurak A.S., Simmons M.Y. et al. // Rev. Mod. Phys. 2013. V. 85. № 3. P. 961.
- Векслер М.И., Грехов И.В., Шулекин А.Ф. // ФТП. 2000. Т. 34. № 7. С. 803.
- Ждан А.Г., Чучева Г.В., Гольдман Е.И. // ФТП. 2006. Т. 40. № 2. С. 195.
- Гольдман Е.И., Левашов С.А., Чучева Г.В. // ФТП. 2019. Т. 53. № 4. С. 481.
- Белорусов Д.А., Гольдман Е.И., Нарышкина В.Г., Чучева Г.В. // ФТП. 2021. Т. 55. № 1. С. 24.
- Гольдман Е.И., Левашова А.И., Левашов С.А., Чучева Г.В. // ФТП. 2015. Т. 49. № 4. С. 483.
- Гольдман Е.И., Левашов С.А., Нарышкина В.Г., Чучева Г.В. // ФТП. 2017. Т. 51. № 9. С. 1185.
- Гольдман Е.И., Кухарская Н.Ф., Левашов С.А., Чучева Г.В. // ФТП. 2019. Т. 53. № 1. С. 46.
- Franz W. // Z. Naturforschung. 1958. V. 13a. № 2. P. 484.
- Келдыш Л.В. // ЖЭТФ. 1957. Т. 33. № 4. С. 994.
- Жёлтиков А.М. // Успехи физ. наук. 2017. Т. 187. № 11. С. 1169.
- Гольдман Е.И., Ждан А.Г., Кухарская Н.Ф., Черняев М.В. // ФТП. 2008. Т. 42. № 1. С. 94.
- Гольдман Е.И., Чучева Г.В., Шушарин И.А. // ФТП. 2022. Т. 56. № 3. С. 328.