Investigation of the Plasma-Chemical Synthesis of Thin Ga2O3 Films Doped with Zn in One Step in Plasma

L. A. Mochalov; Мочалов Л. А.; M. A. Kudryashov; Кудряшов М. А.; I. O. Prokhorov; Прохоров И. О.; M. A. Vshivtsev; Вшивцев М. А.; Yu. P. Kudryashova; Кудряшова Ю. П.; E. A. Slapovskaya; Слаповская Е. А.; A. V. Knyazev; Князев А. В.

doi:10.31857/S0023119323060116

Investigation of the Plasma-Chemical Synthesis of Thin Ga2O3 Films Doped with Zn in One Step in Plasma

Authors: Mochalov L.A.¹, Kudryashov M.A.¹, Prokhorov I.O.¹, Vshivtsev M.A.¹, Kudryashova Y.P.¹, Slapovskaya E.A.¹, Knyazev A.V.¹
Affiliations:
1. Lobachevsky State University of Nizhny Novgorod (National Research University)
Issue: Vol 57, No 6 (2023)
Pages: 478-484
Section: ПЛАЗМОХИМИЯ
URL: https://journals.rcsi.science/0023-1193/article/view/232808
DOI: https://doi.org/10.31857/S0023119323060116
EDN: https://elibrary.ru/RVETZB
ID: 232808

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Abstract
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Abstract

A process for fabricating Zn-doped (up to 10 at %) β-Ga2O3 thin films by plasma-enhanced chemical vapor deposition has been studied. High-purity gallium, zinc, and oxygen were used as starting materials, and hydrogen was chosen as the carrier and plasma gas. A low-temperature nonequilibrium RF (40.68 MHz) discharge plasma at a reduced pressure (0.01 torr) was used to initiate chemical reactions of precursors. The
plasma-chemical process was monitored using optical emission spectroscopy. Structural properties and morphology of the deposited β-Ga2O3 films were studied by various methods.

Keywords

thin films, gallium oxide, PECVD

References

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