Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator
- 作者: Magarill L.I.1,2, Entin M.V.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 104, 编号 11 (2016)
- 页面: 771-775
- 栏目: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/159731
- DOI: https://doi.org/10.1134/S002136401623003X
- ID: 159731
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详细
The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.
作者简介
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
编辑信件的主要联系方式.
Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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