Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator
- Авторлар: Magarill L.I.1,2, Entin M.V.1,2
-
Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 104, № 11 (2016)
- Беттер: 771-775
- Бөлім: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/159731
- DOI: https://doi.org/10.1134/S002136401623003X
- ID: 159731
Дәйексөз келтіру
Аннотация
The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.
Авторлар туралы
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: entin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
Қосымша файлдар
