Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator
- Autores: Magarill L.I.1,2, Entin M.V.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Edição: Volume 104, Nº 11 (2016)
- Páginas: 771-775
- Seção: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/159731
- DOI: https://doi.org/10.1134/S002136401623003X
- ID: 159731
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Resumo
The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.
Sobre autores
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: entin@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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