Email this article Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator
- Authors: Magarill L.I.1,2, Entin M.V.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 104, No 11 (2016)
- Pages: 771-775
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/159731
- DOI: https://doi.org/10.1134/S002136401623003X
- ID: 159731
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Abstract
The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.
About the authors
L. I. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
M. V. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: entin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
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