Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator


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The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.

作者简介

L. Magarill

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

M. Entin

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

编辑信件的主要联系方式.
Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

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