Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films


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Abstract—We have studied some of the electrical properties of thin Sb2Se3 semiconductor films produced by electrodeposition from tartrate electrolytes. The films have been shown to have n-type conductivity. In addition, we have determined some of their semiconductor constants: temperature sensitivity coefficient (B = 15 100 K), temperature coefficient of resistance (α = 0.167 K–1 at 300 K and 0.094 K–1 at 400 K), and band gap (Eg = 1.3 eV). The present results demonstrate that thin Sb2Se3 films can be used in solar cells and thermoelectric elements.

作者简介

V. Majidzade

Nagiyev Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan

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Email: vuska_80@mail.ru
阿塞拜疆, pr. Javida 113, Baku, AZ 1143

A. Aliyev

Nagiyev Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan

Email: vuska_80@mail.ru
阿塞拜疆, pr. Javida 113, Baku, AZ 1143

I. Qasimogli

Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan

Email: vuska_80@mail.ru
阿塞拜疆, pr. Javida 33, Baku, AZ 1143

P. Quliyev

Nakhchivan State University, University Campus

Email: vuska_80@mail.ru
阿塞拜疆, Nakhchivan, AZ 7012

D. Tagiyev

Nagiyev Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan

Email: vuska_80@mail.ru
阿塞拜疆, pr. Javida 113, Baku, AZ 1143

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