Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films

Аннотация

Abstract—We have studied some of the electrical properties of thin Sb₂Se₃ semiconductor films produced by electrodeposition from tartrate electrolytes. The films have been shown to have n-type conductivity. In addition, we have determined some of their semiconductor constants: temperature sensitivity coefficient (B = 15 100 K), temperature coefficient of resistance (α = 0.167 K^–1 at 300 K and 0.094 K^–1 at 400 K), and band gap (E_g = 1.3 eV). The present results demonstrate that thin Sb₂Se₃ films can be used in solar cells and thermoelectric elements.