Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films
- Authors: Majidzade V.A.1, Aliyev A.S.1, Qasimogli I.2, Quliyev P.H.3, Tagiyev D.B.1
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Affiliations:
- Nagiyev Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan
- Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan
- Nakhchivan State University, University Campus
- Issue: Vol 55, No 10 (2019)
- Pages: 979-983
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158772
- DOI: https://doi.org/10.1134/S0020168519100108
- ID: 158772
Cite item
Abstract
Abstract—We have studied some of the electrical properties of thin Sb2Se3 semiconductor films produced by electrodeposition from tartrate electrolytes. The films have been shown to have n-type conductivity. In addition, we have determined some of their semiconductor constants: temperature sensitivity coefficient (B = 15 100 K), temperature coefficient of resistance (α = 0.167 K–1 at 300 K and 0.094 K–1 at 400 K), and band gap (Eg = 1.3 eV). The present results demonstrate that thin Sb2Se3 films can be used in solar cells and thermoelectric elements.
About the authors
V. A. Majidzade
Nagiyev Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan
Author for correspondence.
Email: vuska_80@mail.ru
Azerbaijan, pr. Javida 113, Baku, AZ 1143
A. Sh. Aliyev
Nagiyev Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan
Email: vuska_80@mail.ru
Azerbaijan, pr. Javida 113, Baku, AZ 1143
I. Qasimogli
Abdullaev Institute of Physics, Academy of Sciences of Azerbaijan
Email: vuska_80@mail.ru
Azerbaijan, pr. Javida 33, Baku, AZ 1143
P. H. Quliyev
Nakhchivan State University, University Campus
Email: vuska_80@mail.ru
Azerbaijan, Nakhchivan, AZ 7012
D. B. Tagiyev
Nagiyev Institute of Catalysis and Inorganic Chemistry, Academy of Sciences of Azerbaijan
Email: vuska_80@mail.ru
Azerbaijan, pr. Javida 113, Baku, AZ 1143
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